芯片等級(jí)和缺陷(Blemish)
對(duì)最上面一行像素的電荷包,讀出時(shí)需要通過其所在列的所有像素。如果一列像素中的某個(gè)像素不能形成勢(shì)阱,或形成的勢(shì)阱有缺陷,則在其上面的行的像素電荷包就不能轉(zhuǎn)移出去或轉(zhuǎn)移不完全。這是一種缺陷。
像素感光失效,或量子效率變低,這也是一種缺陷。
缺陷的種類分為:
Traps 陷阱:Pixels where charge is temporarily held. Traps are counted if they have a capacity greater than 200 e? at 253 K.
點(diǎn)缺陷(Point defects):
Black Spot黑點(diǎn):Are counted when they have a signal level of less than 80% of the local mean at a signal level of approximately half full-well.半滿井條件下,計(jì)數(shù)值低于周圍像素平均值的80%的像素。
White Spot白點(diǎn):Are counted when they have a generation rate 125 times the specified maximum dark signal generation rate (measured between 253 and 293 K). 電子生成速率是指定的暗電流規(guī)格最大值的125倍的像素(測(cè)量溫度范圍253K~293K)。
列缺陷(Column defects):A column which contains at least 50 white or 50 black defects. 一列像素黑點(diǎn)或白點(diǎn)個(gè)數(shù)多于50個(gè)。
Column defects A column which contains at least 50 white or 50 black defects.
GRADE | 0 | 1 | 2 |
Column defects;black or white | 0 | 3 | 6 |
Black spots | 100 | 150 | 250 |
Traps >200 e? | 10 | 20 | 30 |
White spots | 100 | 150 | 200 |
Grade 5 Devices which are fully functional, with image quality below that of grade 2, and which may not meet all other performance parameters.
Note: The effect of temperature on defects is that traps will be observed less at higher temperatures but more may appear below 253 K. The amplitude of white spots and columns will decrease rapidly with temperature.
Greateyes以芯片生產(chǎn)商的芯片等級(jí)給出缺陷等級(jí),通常為Grade 0或Grade 1。
上述內(nèi)容由我司Jerry Huang 整理收集,僅用于知識(shí)的分享和共同學(xué)習(xí),未經(jīng)過同意不得擅自轉(zhuǎn)載。